The advantages of laser cutting technology of chemical vapor deposition

In addition to the LCVD technology of laser cutting machine, there are several other methods can be used for thin film deposition, such as the conventional CVD, molecular beam epitaxy ( MBE) , metal laser cutting machine, an organic chemical vapor deposition ( 金属 And plasma assistant deposition technology. Conventional laser cutting technology of CVD heating the base material, during which the reaction gas or steam flow to the substrate surface, chemical reaction and deposition film. The process is very slow, Thin film growth rate for 100 ~ 1000 a/min) 。 And because only the heated surface used for thin film deposition, laser cutting machine in CVD energy utilization rate is very low. In addition, the CVD process of laser cutting technology of deposition temperature can be as high as 1500 k, the influence of semiconductor dopant diffusion coefficient which in turn affect the quality of the semiconductor thin film. In addition, the laser cutting CVD cavity of the contaminants or wafer materials also can be attenuated to higher temperature diffusion in the film. Donor of volatile due to the different sedimentary compound semiconductor thin film material is different, the thin film deposition, laser cutting machine in the heat of evaporation quantity are also different, thus will affect the performance of the film. Conventional laser cutting CVD method at high temperature for wafer defects can also cause physical damage device. In addition, almost of people exposed to high temperature when the captain of the laser cutting all substrate materials are harmful. For example, for aerospace titanium alloy due to grain growth, performance will decrease. Laser cutting machine used in automobile industry ferroalloy may also be the performance degradation due to grain growth and grain boundary diffusion.
MBE technology is laser cutting technology in the use of donor molecular beam or confusion of atomic beam impact is heating the surface of single crystal and make the film epitaxial growth, chemical reaction occurs only in the substrate surface. MBE laser cutting machine is mainly used to make semiconductors and semiconductor devices. MBE laser cutting technology can accurately control the growth of epitaxial film and composition. However, the process is very slow, thin film growth rate is 100 ~ 200 a/min: only other materials film: Bi203. Ca0, CaC03, Cu0, Sr0, SrC03, polymer, TiB2 and siloxane thin film, etc.