Semiconductor laser laser cutting machine

Semiconductor laser laser cutting machine through certain incentives, the band of semiconductor material ( The conduction band and valence band) Between, or band of semiconductor material and impurity ( The acceptor or donor) Between energy levels, population inversion, implementing non-equilibrium carriers when in the state of the population inversion occurs when a large number of electrons and holes of composite stimulated radiation effect. Semiconductor laser incentives mainly has three kinds: 1, the electric injection electric injection semiconductor laser is usually by GaAS ( Gallium arsenide) 、InAS（ Indium arsenide) 、Insb（ Indium antimonide) Materials such as semiconductor junction diode, along the forward biased to motivate, injection current. In the region of the junction plane to produce stimulated emission of radiation 2, electron beam inspired; Electron beam simulative semiconductor laser with N or P type semiconductor single crystal ( PbS, CdS, ZhO, etc. ) As working substance, by high energy electron beam was injected by external incentives. 3, light pumped inspired; Light pumped simulative semiconductor laser with N or P type semiconductor single crystal ( GaAS, InAs, InSb, etc. ) As working substance, with other laser laser as a light pump incentive. At present in the semiconductor laser device, and with good performance is widely used: electric injection with double heterostructure GaAs semiconductor diode laser.
in pumped solid state laser application, such as high power semiconductor laser has made breakthrough progress, its mark is the output power of semiconductor laser increased significantly, foreign kilowatt of high power semiconductor laser has been commercialized, domestic output has reached 600 w sample device. In the future, the main development trend of the semiconductor laser in the laser wide, high power laser, in the short wavelength laser, infrared laser, etc.